SRAM architecture

A static random access memory (SRAM) architecture comprising:

• a read/write control transistor block controlled by a read/write control signal, wherein when the SRAM architecture performs a write operation, the read/write control transistor block electrically connects a path of a bit line BL (bit line) and a path of a bit line BLB ( bitline) to a power supply respectively, and when the SRAM architecture is not at the write operation, the read/write control transistor block disconnects the path of the bit line BL (bit line) and the path of the bit line BLB( bitline) from the power supply respectively;
• an equalize transistor block making the bit lines BL (bit line) and BLB( bitline)to be equal to a level which is an average value of voltages of the bit lines BL (bit line) and BLB( bitline);
• a 6-T SRAM cell storing and writing data;
• a sense amplifier block, wherein when the SRAM architecture performs a read operation and makes the bit lines BL (bit line) and BLB( bitline) generate a minimum voltage difference therebetween, the sense amplifier block reads out the data stored in the 6-T SRAM cell;
• a column selection transistor block selecting a column of the data to be written in or read out when the column of the data is enabled, and disconnecting the paths of the bit lines BL (bit line) and BLB( bitline) from the sense amplifier block when the data stored in the 6-T SRAM cell is read out and the sense amplifier block is enabled;
• and
• a write driver performing the write operation on the 6-T SRAM cell when the SRAM architecture performs the write operation;
• wherein the read/write control transistor block, the equalize transistor block, the 6-T SRAM cell, the sense amplifier block, the column selection transistor block, and write driver are electrically connected with each other, wherein when the write operation of the SRAM architecture ends with the read operation being performed thereafter by disabling the read/write control transistor block, enabling the equalize transistor block to make each of the bit lines BL (bit line) and BLB( bitline) have a voltage equal to a voltage level that makes the sense amplifier block generate a maximum voltage gain, enabling a word line to make the bit lines BL (bit line) and BLB( bitline) generate a voltage difference therebetween, enabling the sense amplifier block and disabling the column selection transistor block when the voltage difference is more than a predetermined minimum value and the voltages of the bit lines BL (bit line) and BLB ( bitline) are varied within a predetermined voltage range, and enabling the sense amplifier block to read the data to out and respectively.