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US 8,009,455 B2Granted
Programmable resistance memory
AssigneeOvonyx, Inc.
InventorsTyler Lowrey, Carl Schell, Wally Czubatyj, Steve Hudgens, Jon Maimon, Jeff Fournier, Mike Hennessey, Ed Spall
Life of this patent
Estimating the term…
Abstract
A memory includes a programmable resistance array with high ratio of dynamic range to drift coefficient phase change memory devices.
Claims16
A method, comprising:
- providing an array of programmable resistance memory cells;
- determining a drift coefficient of a memory cell of said array;
- determining the dynamic range of resistances of a memory cell of said array;
- and
- using said drift coefficient and said dynamic range to assign resistance values to one or more storage levels of a memory cell of said array.
2 more elements
Dependencies are inferred from the claim text.