Back to results
US 8,009,454 B2Granted
Resistance random access memory device and a method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsMyoung-jae Lee, Yoon-dong Park, Hyun-sang Hwang, Dong-soo Lee
Life of this patent
Estimating the term…
Abstract
Provided is a resistance random access memory (RRAM) device and a method of manufacturing the same. A resistance random access memory (RRAM) device may include a lower electrode, a first oxide layer on the lower electrode and storing information using two resistance states, a current control layer made of a second oxide on the first oxide layer and an upper electrode on the current control layer.
Claims10
A RRAM (resistance random access memory device) device comprising:
- a lower electrode;
- a first oxide layer on the lower electrode and storing information using two resistance states, wherein the first oxide layer is made of one selected from the group consisting of NiOx, ZrOx, Nb2O5-x, HfO, ZnO, WO3, CoO, CuO2, and TiO2;
- a current control layer made of a second oxide on the first oxide layer;
- and
- an upper electrode on the current control layer,
- wherein the current control layer has a resistance within a range between about 10 ohm and about 10 kohm, and
- wherein the first oxide layer directly contacts the lower electrode, and the current control layer directly contacts the upper electrode.
4 more elements
A method of manufacturing a RRAM (resistance random access memory device) device comprising:
- providing a lower electrode;
- forming a first oxide layer on the lower electrode and storing information using two resistance states, wherein the first oxide layer is made of one selected from the group consisting of NiOx, ZrOx, Nb2O5-x, HfO, ZnO, WO3, CoO, CuO2, and TiO2;
- forming a current control layer made of a second oxide on the first oxide layer;
- and
- forming an upper electrode on the current control layer,
- wherein the current control layer has a resistance within a range between about 10 ohm and about 10 kohm, and
- wherein the first oxide layer directly contacts the lower electode, and the current control layer directly contacts the upper electrode.
4 more elements
Dependencies are inferred from the claim text.