Heat transfer of processing systems

A processing apparatus comprising:

• a substrate comprising a proximal side and a distal side, the proximal side coated with a coating having a thermal conductivity greater than 300 Watts/meter Celsius (W/m-C);
• a first chip comprising a proximal side and a distal side, wherein the proximal side of the first chip is coupled to the distal side of the substrate using a first connector, wherein the first connector is configured to provide at least one of an electrical connection and a thermal conduit between the substrate and the first chip, wherein the first connector is positioned substantially in an inner portion of the first chip;
• a second chip comprising a proximal side and a distal side, wherein the proximal side of the second chip is coupled to the distal side of the first chip using a second connector, wherein the second connector is configured to provide at least one of an electrical connection and a thermal conduit between the first chip and the second chip, wherein the second connector is positioned substantially in an inner portion of the second chip;
• and
• a mounting member configured to structurally support the substrate and to receive thermal energy from the substrate through the proximal side of the substrate by conduction,
• wherein coefficients of thermal expansion (CTEs) of the substrate, the first chip, the second chip, and the mounting member are matched.

A processing system comprising:

• a base panel;
• and
• a processing module coupled to the base panel, the processing module comprising:
• a mounting member configured to structurally support a first processing unit and receive thermal energy from the first processing unit through a coupling side of the first processing unit by conduction;
• and
• a base member coupled to the mounting member and the base panel, the base member configured to receive thermal energy from the mounting member,
• wherein a thermal conductivity of at least one of the mounting member and the base member is greater than 50 Watts/meter Celsius (W/m-C),
• wherein the base panel is configured to receive thermal energy from the base member, and
• wherein coefficients of thermal expansion (CTEs) of the coupling side of the first processing unit, the mounting member, the base member, and the base panel are matched.