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US 8,009,269 B2Granted
Optimal rasterization for maskless lithography
AssigneesASML Holding N.V., ASML Netherlands B.V.
InventorsKars Zeger Troost, Jason Douglas Hintersteiner, Minne Cuperus, Kamen Hristov Chilov, Richard Carl Zimmerman, Ronnie Florentius Van T Westeinde
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Abstract
A lithographic system is provided in which an extent of overlap between pattern sections is adjusted in order to match a size of a pattern section to a size of a repeating portion of the pattern to be formed.
Claims21
A lithographic apparatus comprising:
- a device configured to emit a modulated beam of radiation;
- a projection system configured to project the modulated beam of radiation onto a substrate;
- and
- a controller configured to control exposing a pattern of radiation on the substrate, wherein the pattern comprises first and second pattern portions corresponding to first and second features to be patterned on the substrate, wherein each of the first and second pattern portions include first and second pattern sections, and
- wherein the controller is configured to control a width or height of an overlap of the first and second pattern sections, such that a first position in the first portion of the first pattern section forming the first feature substantially corresponds to a first position in the second portion of the first pattern section forming the second feature.
2 more elements
A method, comprising:
- modulating a beam of radiation;
- projecting first and second pattern sections formed in the modulated beam of radiation onto the substrate to form first and second pattern portions that correspond to first and second features on the substrate;
- and
- controlling a width or height of an overlap of the first and second pattern sections, such that a first position in the first portion of the first pattern section forming the first feature substantially corresponds to a first position in the second portion of the first pattern section forming the second feature.
1 more element
Dependencies are inferred from the claim text.