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AssigneeSony Corporation
InventorsIsao Hirota, Masahiro Segami, Kenji Nakayama
Estimating the term…
When a signal is read from a CCD solid-state image pickup element, the CCD solid-state image pickup element is driven with at least two driving voltages so that high-speed reading is performed with generation of noise due to interference between the driving voltages reduced. The CCD solid-state image includes a charge storage section between a vertical transfer register and a horizontal transfer register. By performing the transfer of charge in the direction of columns during an effective transfer period of the transfer in the direction of rows, signal charge of one row generated by a light receiving sensor is transferred to the charge storage section, and by performing the transfer outside the effective transfer period in the transfer in the direction of the row, the signal charge of one row transferred to the charge storage section is transferred to the horizontal transfer register.
A method of driving a semiconductor device for physical quantity distribution sensing, the semiconductor device including, in a semiconductor substrate, charge generating sections arranged in a matrix for generating signal charge responsive to an input electromagnetic wave, a first charge transfer section for successively transferring in one direction the signal charge generated by the charge generating section, a second charge transfer section for successively transferring the signal charge, transferred by the first charge transfer section, in another direction different from the one direction, an output section for converting the signal charge transferred by the second charge transfer section into an electrical signal, and a charge storage section arranged between the first charge transfer section and the second charge transfer section, the method comprising the steps of:
A method of driving a semiconductor device for physical quantity distribution sensing, the semiconductor device including, in a semiconductor substrate, charge generating sections arranged in a matrix for generating signal charge responsive to an input electromagnetic wave, a first charge transfer section for successively transferring in one direction the signal charge generated by the charge generating section, a second charge transfer section for successively transferring the signal charge, transferred by the first charge transfer section, in another direction different from the one direction, and a charge storage section arranged between the first charge transfer section and the second charge transfer section the method comprising the steps of:
A driving device for driving a semiconductor device for physical quantity distribution sensing, the semiconductor device including, in a semiconductor substrate, charge generating sections arranged in a matrix for generating signal charge responsive to an input electromagnetic wave, a first charge transfer section for successively transferring in one direction the signal charge generated by the charge generating section, a second charge transfer section for successively transferring the signal charge, transferred by the first charge transfer section, in another direction different from the one direction, a charge storage section arranged between the first charge transfer section and the second charge transfer section and an output section for converting the signal charge transferred from the second charge transfer section into an electrical signal, the driving device comprising:
An electronic apparatus comprising:
Dependencies are inferred from the claim text.