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US 8,008,778 B2Granted
Semiconductor device
AssigneeSpansion LLC
InventorTakayuki Enda
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a first metal layer provided above a semiconductor substrate, an interlayer insulating film provided above the first metal layer, a second metal layer that is provided in an opening formed in the interlayer insulating film and is in contact with an underlying layer, the second metal layer being connected to the first metal layer, and a first barrier layer that is provided between the second metal layer and the interlayer insulating film and has a different main composition from that of the underlying layer.
Claims10
A semiconductor device comprising:
- a first metal layer provided above a semiconductor substrate;
- an interlayer insulating film provided above the first metal layer;
- a second metal layer, having side surfaces, that is provided in an opening formed in the interlayer insulating film and is in contact with an underlying layer, wherein the underlying layer contacts the side surfaces of the second metal layer and the second metal layer is connected to the first metal layer;
- and
- a first barrier layer that is provided between the second metal layer and the interlayer insulating film and has a different main composition from that of the underlying layer wherein the first barrier layer and the underlying layer form a single inclined surface that contacts an inclined side surface of the second metal layer.
2 more elements
A computing device comprising:
- a processor;
- an input component;
- an output component;
- a memory comprising:
- a volatile memory;
- and
- a non-volatile memory comprising:
- a first metal layer provided above a semiconductor substrate;
- an interlayer insulating film provided above the first metal layer;
- a second metal layer, having side surfaces, that is provided in an opening formed in the interlayer insulating film and is in contact with an underlying layer, wherein the underlying layer contacts the side surfaces of the second metal layer and the second metal layer is connected to the first metal layer;
- a first barrier layer that is provided between the second metal layer and the interlayer insulating film and has a different main composition from that of the underlying layer wherein the first barrier layer and the underlying layer form a single inclined surface that contacts an inclined side surface of the second metal layer.
8 more elements
A wireless communications device, said wireless communications device comprising:
- a non-volatile memory comprising:
- a first metal layer provided above a semiconductor substrate;
- an interlayer insulating film provided above the first metal layer;
- a second metal layer, having side surfaces, that is provided in an opening formed in the interlayer insulating film and is in contact with an underlying layer, wherein the underlying layer contacts the side surfaces of the second metal layer and the second metal layer is connected to the first metal layer;
- a first barrier layer that is provided between the second metal layer and the interlayer insulating film and has a different main composition from that of the underlying layer wherein the first barrier layer and the underlying layer form a single inclined surface that contacts an inclined side surface of the second metal layer,
- a processor;
- a communications component;
- a transmitter;
- a receiver;
- and
- an antenna connected to the transmitter circuit and the receiver circuit.
8 more elements
A media content player comprising:
- a non-volatile memory that stores one or more media content items, said non-volatile memory comprising:
- a first metal layer provided above a semiconductor substrate;
- an interlayer insulating film provided above the first metal layer;
- a second metal layer, having side surfaces, that is provided in an opening formed in the interlayer insulating film and is in contact with an underlying layer, wherein the underlying layer contacts the side surfaces of the second metal layer and the second metal layer is connected to the first metal layer;
- a first barrier layer that is provided between the second metal layer and the interlayer insulating film and has a different main composition from that of the underlying layer wherein the first barrier layer and the underlying layer form a single inclined surface that contacts an inclined side surface of the second metal layer,
- a user input that enables the selection of one or more of said media item;
- a processor coupled to said user input and said storage component that causes the playback of a selected media item, and
- one or more playback devices for conveying the playback of said media item.
5 more elements
An image acquisition system, comprising:
- an image acquisition component for acquiring image data;
- a storage component for storing image data, said storage component comprising non-volatile memory comprising:
- a first metal layer provided above a semiconductor substrate;
- an interlayer insulating film provided above the first metal layer;
- a second metal layer, having side surfaces, that is provided in an opening formed in the interlayer insulating film and is in contact with an underlying layer, wherein the underlying layer contacts the side surfaces of the second metal layer and the second metal layer is connected to the first metal layer;
- a first barrier layer that is provided between the second metal layer and the interlayer insulating film and has a different main composition from that of the underlying layer wherein the first barrier layer and the underlying layer form a single inclined surface that contacts an inclined side surface of the second metal layer, and
- a display unit for displaying said image data stored in said storage component.
4 more elements
Dependencies are inferred from the claim text.