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US 8,008,774 B2Granted
Multi-layer metal wiring of semiconductor device preventing mutual metal diffusion between metal wirings and method for forming the same
AssigneeHynix Semiconductor Inc.
InventorsSoo Hyun Kim, Baek Mann Kim, Young Jin Lee, Dong Ha Jung, Jeong Tae Kim
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Abstract
A multi-layer metal wiring of a semiconductor device and a method for forming the same are disclosed. The multi-layer metal wiring of the semiconductor device includes a lower Cu wiring, and an upper Al wiring formed to be contacted with the lower Cu wiring, and a diffusion barrier layer interposed between the lower Cu wiring and the upper Al wiring. The diffusion barrier layer is formed of a W-based layer.
Claims14
A multi-layer metal wiring of a semiconductor device comprising:
- a lower Cu wiring;
- an upper Al wiring formed over the lower Cu wiring and electrically contacting the lower Cu wiring;
- and
- a W-based diffusion barrier layer formed between the lower Cu wiring and the upper Al wiring, wherein the W-based diffusion barrier layer comprises a stacked layer of a WSix layer and a WSixNy layer.
1 more element
A method for forming a multi-layer metal wiring of a semiconductor device including:
- forming a lower Cu wiring over a semiconductor substrate;
- forming a w-based diffusion barrier layer on the lower Cu wiring, wherein the W-based diffusion barrier layer comprises a stacked layer of a WSix layer and a WSiNy layer;
- and
- forming an upper Al wiring over the lower Cu wiring including the W-based diffusion barrier layer.
1 more element
Dependencies are inferred from the claim text.