Semiconductor device, manufacturing method thereof, composite metal body and manufacturing method thereof
AssigneeHitachi, Ltd.
InventorsToshiaki Morita, Yusuke Yasuda, Eiichi Ide
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Abstract
A semiconductor device having a structure in which a semiconductor element and a Cu or Ni electrode are connected by way of a bonding layer comprising Cu, and the Cu bonding layer and the Cu or Ni electrode are diffusion-bonded to each other. The bonding layer is formed by conducting bonding in a reducing atmosphere by using a bonding material containing particles of Cu oxide with an average particle size of 1 nm to 50 μm and a reducing agent comprising an organic material, thereby providing excellent bonding strength to Ni or Cu electrode.
Claims17
A semiconductor device comprising a semiconductor element, an electrode comprising a material selected from the group consisting of Cu, Ni, and alloys thereof, a bonding layer for bonding the semiconductor element to the electrode and a diffusion layer containing Cu and Ni or Cu, which is formed between the bonding layer and the electrode by mutual diffusion of Ni in the electrode and Cu in the bonding layer or Cu in the electrode and Cu in the bonding layer, wherein an oxide layer is not substantially present at the boundary between the bonding layer and the electrode.
A semiconductor device comprising a semiconductor element,
- an electrode bonded to the element by means of a bonding layer made from fired copper oxide particles having a particle size smaller than that of the metal of the electrode, wherein the electrode is made of Cu, Ni and their alloys, and the bonding layer is bonded to the electrode by means of a diffusion layer containing Cu and Ni or Cu, which is formed by mutual diffusion of Cu in the bonding layer and Ni in the electrode or Cu in the bonding layer and the electrode, wherein an oxide layer is not substantially present at the boundary between the bonding layer and the electrode, and wherein an oxide layer of Cu or Ni is not substantially present between the electrode and the bonding layer.
A semiconductor device, which comprises:
- a semiconductor element sandwiched between electrodes made of a material selected from the group consisting of Cu, Ni or their alloys, wherein both faces of the semiconductor element are bonded to the electrodes by means of bonding layers of fired copper between the electrodes and the element, and wherein a diffusion layer containing both Cu and Ni or Cu is formed between the bonding layers and the electrodes.
Dependencies are inferred from the claim text.