Integrated semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsHiroshi Yamada, Kazuhiko Itaya, Yutaka Onozuka, Hideyuki Funaki
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Abstract
An integrated semiconductor device includes a plurality of semiconductor elements having different integrated element circuits or different sizes; an insulating material arranged between the semiconductor elements; an organic insulating film arranged entirely on the semiconductor elements and the insulating material; a fine thin-layer wiring that arranged on the organic insulating film and connects the semiconductor elements; a first input/output electrode arranged on an area of the insulating material; and a first bump electrode formed on the first input/output electrode.
Claims8
An integrated semiconductor device comprising:
- a plurality of semiconductor elements having different integrated element circuits or different sizes;
- an insulating material arranged between the semiconductor elements;
- an organic insulating film formed directly on the semiconductor elements and the insulating material;
- a fine thin-layer wiring formed directly on the organic insulating film and directly contacting the semiconductor elements;
- a plurality of first input/output electrodes;
- and
- a plurality of first bump electrodes, each of the first bump electrodes being respectively formed on one of the first input/output electrodes, wherein
- all of the first input/output electrodes are disposed only on an area of the insulating material.
An integrated semiconductor device comprising:
- an integrated circuit with two semiconductor elements separated by an insulating material;
- an organic insulating film formed over the two semiconductor elements;
- a wiring directly connected to at least one of the semiconductor elements;
- a plurality of input/output electrodes;
- and
- a plurality of first bump electrodes, each of the first bump electrodes being respectively formed on one of the input/output electrodes, wherein
- all of the input/output electrodes are arranged only on the insulating material disposed between the semiconductor elements, and electrically connected to the at least one wiring.
Dependencies are inferred from the claim text.