Semiconductor device and manufacturing method thereof
AssigneeKabushiki Kaisha Toshiba
InventorsToshifumi Irisawa, Shinichi Takagi, Naoharu Sugiyama
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Abstract
A semiconductor device includes an insulator layer, and an n-channel MIS transistor having an n channel and a pMIS transistor having a p channel which are formed on the insulator layer, wherein the n channel of the n-channel MIS transistor is formed of an Si layer having a uniaxial tensile strain in a channel length direction, the p channel of the p-channel MIS transistor is formed of an SiGe or Ge layer having a uniaxial compressive strain in the channel length direction, and the channel length direction of each of the n-channel MIS transistor and the p-channel MIS transistor is a <110> direction.
Claims7
A semiconductor device comprising:
- an insulator layer;
- a first semiconductor region formed in a linear shape having an upper surface and two side surfaces along one direction on the insulator layer, the upper surface having a (001) surface, each of the two side surfaces having a (110) surface, the first semiconductor region having a <110> crystal direction as a longitudinal direction thereof and is made of Si having a uniaxial tensile strain in the <110>crystal direction;
- an n-channel MIS transistor formed on the first semiconductor region, the n-channel MIS transistor including a first gate electrode formed on at least the two side surfaces of the first semiconductor region through a first gate insulating film and having the <110>crystal direction as a channel length direction thereof and a first source/drain region formed on the first semiconductor region to interpose the first gate electrode therebetween;
- a second semiconductor region formed in a linear shape having an upper surface and two side surfaces on the insulator layer in parallel with the first semiconductor region, the upper surface having a (001) surface, each of the two side surfaces having a (110) surface, the second semiconductor region having the <110>crystal direction as a longitudinal direction thereof and is made of SiGe or Ge having a uniaxial compressive strain in the <110>crystal direction;
- and
- a p-channel MIS transistor formed on the second semiconductor region, the p-channel MIS transistor including a second gate electrode formed on at least the two side surfaces of the second semiconductor region through a second gate insulating film and having the <110>crystal direction as a channel length direction thereof and a second source/drain region formed on the second semiconductor region to interpose the second gate electrode therebetween.
Dependencies are inferred from the claim text.