Semiconductor device having vertical electrodes structure

A semiconductor device comprising:

• a first electrode;
• a first conductor layer formed on the first electrode, the first conductor layer being made of a semiconductor material with a uniform concentration of impurities along a thickness direction and being in ohmic contact with the first electrode;
• an electric current regulation layer covering a part of a surface of the first conductor layer and leaving a non-covered surface at the surface of the first conductor layer;
• a semiconductor layer covering a surface of the electric current regulation layer;
• a conducting region connecting the semiconductor layer to the first conductor layer at the non-covered surface;
• a control electrode facing an intermediate portion of the semiconductor layer, the intermediate portion being separated laterally from the non-covered surface by a first portion of the semiconductor layer, the first portion extending vertically from a surface of the electric current regulation layer to a top surface of the semiconductor layer;
• and
• a second electrode formed at a surface of the semiconductor layer, the second electrode being located at a position separated laterally from the non-covered surface,
• wherein
• a semiconductor structure constructed by a plurality of semiconductor regions is formed within the semiconductor layer,
• a depletion layer is disposed within the first portion at non-conduction state, and
• the first portion has a length extending between the intermediate portion and the non-covered surface, the length being at least three times greater than a thickness of the first portion.