Semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsKonami Izumi, Mayumi Yamaguchi
Life of this patent
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Abstract
A micromachine includes a microstructure and a semiconductor element formed over one insulating substrate. The micromachine includes including a movable layer containing polycrystalline silicon and a space below or above the layer. Such polycrystalline silicon is formed on an insulating surface, so that it is used as a microstructure and used for forming a semiconductor element. Accordingly, a semiconductor device may include a microstructure and a semiconductor element provided over one insulating substrate.
Claims27
A microstructure comprising:
- a semiconductor layer over an insulating surface;
- a first insulating layer over the semiconductor layer;
- a moveable layer over the first insulating layer, wherein a first space is provided between the first insulating layer and the moveable layer;
- and
- a second insulating layer over the moveable layer.
A microstructure comprising:
- a semiconductor layer over an insulating surface;
- a first insulating layer over the semiconductor layer;
- a moveable layer over the first insulating layer, wherein a first space is provided between the first insulating layer and the moveable layer;
- a layer over and in contact with the moveable layer;
- and
- a second insulating layer over the layer.
A microstructure over a first substrate having an insulating surface, the microstructure comprising:
- a semiconductor layer over an insulating surface;
- a first insulating layer over the semiconductor layer;
- a moveable layer over the first insulating layer, wherein a first space is provided between the first insulating layer and the moveable layer;
- a second insulating layer over the moveable layer;
- and
- a second substrate over a first substrate with the microstructure interposed between the first substrate and the second substrate.
Dependencies are inferred from the claim text.