Micromachine device with a spatial portion formed within
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsMayumi Yamaguchi, Konami Izumi
Life of this patent
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Abstract
A semiconductor element of the electric circuit includes a semiconductor layer over a gate electrode. The semiconductor layer of the semiconductor element is formed of a layer including polycrystalline silicon which is obtained by crystallizing amorphous silicon by heat treatment or laser irradiation, over a substrate. The obtained layer including polycrystalline silicon is also used for a structure layer such as a movable electrode of a structure body. Therefore, the structure body and the electric circuit for controlling the structure body can be formed over one substrate. As a result, a micromachine can be miniaturized. Further, assembly and packaging are unnecessary, so that manufacturing cost can be reduced.
Claims16
A micromachine comprising:
- an electric circuit including a semiconductor element having a gate electrode and a first semiconductor layer over the gate electrode, the first semiconductor layer being over an insulating layer;
- and
- a structure body electrically connected to the electric circuit,
- wherein the structure body defines an open space and includes a second semiconductor layer and a conductive layer,
- wherein the conductive layer is formed selectively to contact with at least one side surface of the insulating layer,
- wherein the open space of the structure body is defined between the conductive layer and the second semiconductor layer,
- wherein the second semiconductor layer is a layer including polycrystalline silicon, and
- wherein a height of the open space is variable due to application of an external force to the second semiconductor layer.
A micromachine comprising:
- a substrate;
- an insulating layer formed over the substrate;
- and
- a structure body including a first semiconductor layer formed over the insulating layer and a conductive layer, wherein the structure body defines an open space between the conductive layer and the first semiconductor layer;
- and
- a semiconductor element formed over the substrate, the semiconductor element including a gate electrode and a second semiconductor layer formed over the gate electrode,
- wherein the conductive layer is formed selectively to contact with at least one side surface of the insulating layer,
- wherein the second semiconductor layer is a layer including polycrystalline silicon, and
- wherein a height of the open space is variable due to application of an external force to the first semiconductor layer.
Dependencies are inferred from the claim text.