Integrated circuit with a contact structure including a portion arranged in a cavity of a semiconductor structure

An integrated circuit, comprising:

• a contact structure comprising a first and a second portion, wherein the first portion of the contact structure is arranged in a cavity formed in a main surface of a semiconductor structure and is in direct contact with the semiconductor structure and wherein the second portion of the contact structure is arranged above the main surface and is in direct contact with a conductive structure separated from the main surface;
• and
• an insulator structure arranged below and in direct contact with the contact structure, wherein:
• the semiconductor structure comprises a first region of a first conductivity type adjacent to the main surface and a second region of a second conductivity type forming a pn-junction with the first region opposite the main surface;
• and
• the contact structure is in direct contact with the first region.

An integrated circuit, comprising:

• a field effect transistor comprising a source/drain region adjacent a main surface of a semiconductor structure, the source/drain region being of a first conductivity type and being embedded in a well structure of a second conductivity type such that a pn-junction is formed between the source/drain region and the well structure;
• a contact structure comprising:
• a first portion arranged in a cavity in the semiconductor structure and in direct contact with the source/drain region;
• and
• a second portion arranged above the main surface of the semiconductor structure and in direct contact with a conductive structure, the conductive structure being separated from the main surface;
• and
• an insulator structure arranged below and in direct contact with the contact structure.

An integrated circuit, comprising:

• a semiconductor structure including a cavity disposed in a main surface thereof;
• a contact structure arranged in the cavity and in contact with the semiconductor structure, wherein the contact structure comprises a metal and a portion of the contact structure protrudes from the semiconductor structure;
• and
• an insulator structure disposed in a bottom portion of the cavity and between the semiconductor structure and the contact structure, the insulator structure being in direct contact with the contact structure and completely filling the bottom portion of the cavity below the contact structure such that a horizontal cross-sectional area and shape of the insulator structure is approximately equal to that of an adjacent portion of the contact structure.