Semiconductor device
AssigneeRenesas Electronics Corporation
InventorYoshiya Kawashima
Life of this patent
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Abstract
A semiconductor device of the present invention has a first-conductivity-type substrate having second-conductivity-type base regions exposed to a first surface thereof; trench gates provided to a first surface of the substrate; first-conductivity-type source regions formed shallower than the base regions; a plurality of second-conductivity-type column regions located between two adjacent trench gates in a plan view, while being spaced from each other in a second direction normal to the first direction; the center of each column region and the center of each base contact region fall on the center line between two trench gates; and has no column region formed below the trench gates.
Claims4
A semiconductor device comprising:
- a substrate of a first conductivity type, having second-conductivity-type base regions on a first surface thereof;
- trench gates provided in the first surface of said substrate, disposed while being spaced from each other in a first direction in plan view;
- first-conductivity-type source regions formed in said first surface, and to a depth shallower than said base regions;
- and
- a plurality of second-conductivity-type column regions formed in said substrate and under said base regions, and located between two adjacent trench gates in plan view,
- wherein, between two adjacent trench gates, said plurality of column regions are disposed while being spaced from each other in a second direction normal to said first direction,
- the center of each column region falls on the center line between two adjacent trench gates in said first direction, and
- said column regions are not formed under said trench gates.
Dependencies are inferred from the claim text.