Semiconductor device including a MOSFET and a Schottky junction

A semiconductor device including a MOSFET, comprising:

• a semiconductor substrate having a main surface and a back surface opposite to the main surface;
• a plurality of transistor cell regions disposed in the semiconductor substrate,
• each of the plurality of transistor cell regions including:
• a plurality of trenches disposed on the main surface of the semiconductor substrate,
• a well region in which a channel of the MOSFET is formed, disposed between the plurality of trenches,
• a gate insulating film of the MOSFET disposed in each of the plurality of trenches,
• a gate electrode of the MOSFET disposed over the gate insulating film in each of the plurality of trenches, and
• a source region of the MOSFET disposed in the well region;
• a source electrode of the MOSFET disposed over the main surface of the semiconductor substrate and being in contact with a top surface of the source region in each of the plurality of transistor cell regions,
• a drain electrode of the MOSFET disposed over the back surface of the semiconductor substrate and electrically connected to the semiconductor substrate;
• and
• a Schottky cell region disposed between the plurality of transistor cell regions in the semiconductor substrate,
• the source electrode being in contact with a part of the main surface of the semiconductor substrate so as to form a Schottky junction in the Schottky cell region, and
• the Schottky junction being located lower than a top surface of the source region.