Metal line of semiconductor device having a diffusion barrier and method for forming the same
AssigneeHynix Semiconductor Inc.
InventorsNam Yeal Lee, Seung Jin Yeom, Baek Mann Kim, Dong Ha Jung, Joon Seok Oh
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Abstract
An insulation layer is formed on a semiconductor substrate so as to define a metal line forming region. A diffusion barrier having a multi-layered structure of an Mox1Si1-x1 layer, an Mox2Siy2Nz2 layer, and an Moy3N1-y3 layer is formed on a surface of the metal line forming region. A metal layer is formed on the diffusion barrier so as to fill the metal line forming region of the insulation layer.
Claims20
A metal line of a semiconductor device comprising an insulation layer formed on a semiconductor substrate defining a metal line forming region, the metal line comprising:
- a diffusion barrier formed on a surface of the metal line forming region of the insulation layer and having a multi-layered structure comprising an Mox1Si1-x1 layer, an Mox2Siy2Nz2 layer, and an Moy3N1-y3 layer;
- and
- a metal layer formed on the diffusion barrier and filling the metal line forming region.
A method for forming a metal line of a semiconductor device, comprising:
- forming an insulation layer on a semiconductor substrate so as to define a metal line forming region;
- forming a diffusion barrier on the insulation layer and a surface defining the metal line forming region, the diffusion barrier to have a multi-layered structure comprising an Mox1Si1-x1 layer, an Mox2Siy2Nz2 layer, and an Moy3N1-y3 layer;
- and
- forming a metal layer on the diffusion barrier so as to fill the metal line forming region.
Dependencies are inferred from the claim text.