Semiconductor thin film and method of manufacturing the same and semiconductor device and method of manufacturing the same

A semiconductor device comprising:

• a substrate;
• a semiconductor film formed on and in contact with an insulating layer over the substrate;
• a first insulating film on the semiconductor film;
• a gate electrode over the first insulating film;
• a side wall insulator on a side surface of the gate electrode;
• a source region and a drain region in the semiconductor film;
• a first metal-silicide film on the source region, a second metal-silicide film on the drain region and a third metal-silicide film on the gate electrode;
• and
• a second insulating film in contact with the side wall insulator and an upper surface of the third metal-silicide film,
• wherein a thickness of the first insulating film is 2 to 6 nm, and
• wherein a bottom surface of the side wall insulator is in contact with an upper surface of the first insulating film.

A semiconductor device comprising:

• a substrate;
• a semiconductor film formed on and in contact with an insulating layer over the substrate;
• a first insulating film on the semiconductor film;
• a gate electrode over the first insulating film;
• a side wall insulator on a side surface of the gate electrode;
• a source region and a drain region in the semiconductor film;
• a first metal-silicide film on the source region, a second metal-silicide film on the drain region and a third metal-silicide film on the gate electrode;
• a second insulating film in contact with the side wall insulator and an upper surface of the third metal-silicide film;
• and
• a first wiring electrically connected with the source region through the first metal-silicide film, a second wiring electrically connected with the drain region through the second metal-silicide film and a third wiring electrically connected with the gate electrode through the third metal-silicide film,
• wherein a thickness of the first insulating film is 2 to 6 nm.

A method of manufacturing a semiconductor device comprising:

• forming a semiconductor film on and in contact with an insulating layer over a substrate;
• forming a first insulating film of 2 to 6 nm thick on the semiconductor film;
• forming a gate electrode over the first insulating film;
• forming a side wall insulator on a side surface of the gate electrode;
• forming a metal-silicide film on the gate electrode;
• forming a second insulating film over the gate electrode and the side wall insulator wherein the second insulating film is in contact with an upper surface of the metal-silicide film;
• and
• forming a source region and a drain region in the semiconductor film by doping an impurity to the semiconductor film with the use of the gate electrode and the side wall insulator as a mask,
• wherein a bottom surface of the side wall insulator is in contact with an upper surface of the first insulating film.

A method of manufacturing a semiconductor device comprising:

• forming a semiconductor film on and in contact with an insulating layer over a substrate;
• forming a first insulating film of 2 to 6 nm thick on the semiconductor film;
• forming a gate electrode over the first insulating film;
• forming a metal-silicide film on the gate electrode;
• forming a side wall insulator on a side surface of the gate electrode;
• forming a second insulating film over the gate electrode and the side wall insulator wherein the second insulating film is in contact with an upper surface of the metal-silicide film;
• forming a source region and a drain region in the semiconductor film by doping an impurity to the semiconductor film with the use of the gate electrode and the side wall insulator as a mask;
• and
• forming metal-silicide films on the source region, the drain region and the gate electrode by heating,
• wherein a bottom surface of the side wall insulator is in contact with an upper surface of the first insulating film.

A method of manufacturing a semiconductor device comprising:

• forming a semiconductor film on and in contact with an insulating layer over a substrate;
• forming a first insulating film of 2 to 6 nm thick on the semiconductor film;
• forming a gate electrode over the first insulating film;
• forming a side wall insulator on a side surface of the gate electrode;
• forming a source region and a drain region in the semiconductor film by doping an impurity to the semiconductor film with the use of the gate electrode and the side wall insulator as a mask;
• forming a first metal-silicide film on the source region, a second metal-silicide film on the drain region and a third metal-silicide film on the gate electrode;
• forming a second insulating film over the semiconductor film, the gate electrode and the side wall insulator wherein the second insulating film is in contact with an upper surface of the third metal-silicide film;
• and
• forming a first wiring electrically connected with the source region through the first metal-silicide film, a second wiring electrically connected with the drain region through the second metal-silicide film and a third wiring electrically connected with the gate electrode through the third metal-silicide film.