Ion sensitive field effect transistor and production method thereof
AssigneeNational Tsing Hua University
InventorsJer-Liang Andrew Yeh, Shang-Jr Gwo
Life of this patent
Estimating the term…
Abstract
The present invention discloses an ion sensitive field effect transistor, comprising: a GaN/sapphire layer, used as a substrate; an a-InN:Mg epilayer, deposited on the GaN/sapphire layer, used to provide a current path; a first metal contact, deposited on the a-InN:Mg epilayer to provide drain contact; and a second metal contact, deposited on the a-InN:Mg epilayer to provide source contact; and a patterned insulating layer, used to cover the first metal contact, the second metal contact and the a-InN:Mg epilayer, wherein the patterned insulating layer has a contact window defining an exposure area of the a-InN:Mg epilayer.
Claims15
An ion sensitive field effect transistor, comprising:
- a substrate;
- a Mg-doped InN (a-InN:Mg) epilayer, deposited on said substrate, used to provide a current path;
- a first conductive contact, deposited on said InN:Mg epilayer to provide drain contact;
- and
- a second conductive contact, deposited on said InN:Mg epilayer to provide source contact;
- and
- a patterned insulating layer, used to cover said first conductive contact, said second conductive contact and said InN:Mg epilayer, wherein said patterned insulating layer has a contact window defining an exposure area of said InN:Mg epilayer.
An ion sensitive field effect transistor production method, comprising the steps of:
- forming a substrate;
- depositing an InN:Mg epilayer on said substrate;
- depositing a first conductive contact and a second conductive contact on said InN:Mg epilayer to provide drain contact and source contact respectively;
- and
- forming a patterned insulating layer to cover said first conductive contact, said second conductive contact and said InN:Mg epilayer, wherein said patterned insulating layer has a contact window defining an exposure area of said InN:Mg epilayer.
Dependencies are inferred from the claim text.