Amorphous-silicon thin film transistor and shift register having the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSeung-Hwan Moon, Back-Won Lee
Life of this patent
Estimating the term…
Loading patent…
AssigneeSamsung Electronics Co., Ltd.
InventorsSeung-Hwan Moon, Back-Won Lee
Estimating the term…
An amorphous-silicon thin film transistor and a shift resister shift resister having the amorphous-silicon TFT include a first conductive region, a second conductive region and a third conductive region. The first conductive region is formed on a first plane spaced apart from a substrate by a first distance. The second conductive region is formed on a second plane spaced apart from the substrate by a second distance. The second conductive region includes a body conductive region and two hand conductive regions elongated from both ends of the body conductive region to form an U-shape. The third conductive region is formed on the second plane. The third conductive region includes an elongated portion. The elongated portion is disposed between the two hand conductive regions of the second conductive region. The amorphous-silicon TFT and the shift resister having the amorphous TFT reduce a parasitic capacitance between the gate electrode and drain electrode.
A shift register for driving a liquid crystal display device, shift register providing turn-on signal and turn-off signal to a plurality of gate lines electrically coupled to a plurality of thin film transistors arranged in a matrix shape on a liquid crystal display panel, the shift register comprising:
Dependencies are inferred from the claim text.