Light emitting device and method for manufacturing the same
AssigneeLG Innotek Co., Ltd.
InventorsSung Min Hwang, Hyun Kyong Cho, Gyeong Geun Park
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Abstract
A light emitting device according to an embodiment is provided. The light emitting device comprises a second electrode layer, a third conductive semiconductor layer comprising a schottky contact region and an ohmic contact region on the second electrode layer, a second conductive semiconductor layer on the third conductive semiconductor layer, an active layer on the second conductive semiconductor layer, a first conductive semiconductor layer on the active layer, and a first electrode layer on the first conductive semiconductor layer.
Claims19
A light emitting device, comprising:
- a second electrode layer;
- a third conductive semiconductor layer comprising a schottky contact region and an ohmic contact region on the second electrode layer;
- a second conductive semiconductor layer on the third conductive semiconductor layer;
- an active layer on the second conductive semiconductor layer;
- a first conductive semiconductor layer on the active layer;
- and
- a first electrode layer on the first conductive semiconductor layer.
A light emitting device, comprising:
- a second electrode layer;
- a third conductive semiconductor layer comprising a third region having a third thickness and a fourth region having a fourth thickness thinner than the third thickness, on the second electrode layer;
- a second conductive semiconductor layer on the third conductive semiconductor layer;
- an active layer on the second conductive semiconductor layer;
- a first conductive semiconductor layer on the active layer;
- and
- a first electrode layer on the first conductive semiconductor layer, wherein at least one portion of the first electrode layer overlaps with the third region in a vertical direction,
- wherein the second electrode layer comprises:
- a first region having a first thickness, disposed at a region where at least one portion of the first region overlaps with the fourth region in a vertical direction;
- and
- a second region having a second thickness thinner than the first thickness, disposed at a region where at least one portion of the second region overlaps with the third region in a vertical direction.
A light emitting device, comprising:
- a second electrode layer;
- a third conductive semiconductor layer comprising a third region which has a third thickness and is disposed at a peripheral portion, and a fourth region having a fourth thickness thinner than the third thickness, on the second electrode layer;
- a second conductive semiconductor layer on the third conductive semiconductor layer;
- an active layer on the second conductive semiconductor layer;
- a first conductive semiconductor layer on the active layer;
- and
- a first electrode layer on the first conductive semiconductor layer,
- wherein a surface of the third conductive semiconductor layer contacting the second electrode layer has an uneven shape.
Dependencies are inferred from the claim text.