US 8,008,680 B2 · Light-emitting diode device and manufacturing method thereof

Abstract

A light-emitting diode (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first type conductivity semiconductor layer, an active layer, a second type conductivity semiconductor layer, a transparent conductive oxide stack structure, a first electrode, and a second electrode. The first semiconductor layer on the substrate has a first portion and a second portion. The active layer and the second semiconductor layer are subsequently set on the first portion. The transparent conductive oxide stack structure on the second semiconductor layer has at least two resistant interfaces. The first electrode is above the second portion, and the second electrode is above the transparent conductive oxide stack structure.

Claims16

Dependent claims

A light-emitting diode device structure comprising:

a substrate;
an epitaxial stack disposed on the substrate;
and
a transparent conductive oxide stack structure comprising a plurality of transparent conductive layers disposed on the epitaxial stack, wherein any two adjacent layers of the plurality of transparent conductive layers comprises the same materials with different composition ratios;
wherein the transparent conductive oxide stack structure comprises a first transparent conductive layer having a first resistance disposed on the epitaxial stack, a second transparent conductive layer having a second resistance disposed on the first transparent conductive layer, and a third transparent conductive layer having a third resistance disposed on the second transparent conductive layer;
and
wherein the second resistance is between the first resistance and the third resistance.

4 more elements

Dependencies are inferred from the claim text.

Light-emitting diode device and manufacturing method thereof

Life of this patent

Light-emitting diode device and manufacturing method thereof

Life of this patent

Abstract

Claims16