Light emitting diode and method
AssigneeHuga Optotech Inc.
InventorHsuan-Tang Chan
Life of this patent
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Abstract
A light emitting diode and methods of forming the same are provided. The light emitting diode includes an epitaxy chip having a first substrate, a first conductive semiconductor layer, a light emitting layer and a second conductive semiconductor layer on the first substrate; a second substrate holding the epitaxy chip; an isolation layer on the second substrate, the isolation layer having a first portion connecting to one side of the epitaxy chip and a second portion connecting to another side of the epitaxy chip; a first electrode on the first portion of the isolation layer; and a second electrode on the second portion of the isolation layer, wherein the first electrode and the second electrode respectively and electrically connect to the first conductive semiconductor layer and the second conductive semiconductor layer.
Claims11
A light emitting diode, comprising:
- an epitaxy chip having an epitaxial stack and a first substrate underlying the epitaxial stack, wherein the epitaxial stack has a first conductive semiconductor layer, a light emitting layer and a second conductive semiconductor layer;
- a second substrate holding the epitaxy chip;
- an isolation layer on the second substrate, the isolation layer having a first portion connecting to one side of the epitaxy chip and a second portion connecting to another side of the epitaxy chip;
- a first electrode on the first portion of the isolation layer;
- and
- a second electrode on the second portion of the isolation layer, wherein the first electrode and the second electrode respectively and electrically connects to the first conductive semiconductor layer and the second conductive semiconductor layer;
- wherein none of the first and second electrodes covers the first or second conductive semiconductor layer.
Dependencies are inferred from the claim text.