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US 8,008,678 B2Granted
Light-emitting diode with increased light extraction
AssigneeSemiLEDs Corporation
InventorsChuong Anh Tran, Trung Tri Doan
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Abstract
Methods are disclosed for forming a vertical semiconductor light-emitting diode (VLED) device having an active layer between an n-doped layer and a p-doped layer; and securing a plurality of balls on a surface of the n-doped layer of the VLED device.
Claims21
A light-emitting diode (LED) device comprising:
- an n-doped layer;
- an active layer for emitting light adjacent the n-doped layer;
- a p-doped layer adjacent the active layer;
- a metal substrate adjacent the p-doped layer;
- a plurality of balls disposed above a surface of the n-doped layer;
- and
- an optically transparent and electrically conductive contact layer disposed above the plurality of balls and configured such that a bias applied across the p-doped layer and the n-doped layer generates light that is emitted through the n-doped layer and emitted to the ambient via the contact layer.
4 more elements
A vertical light-emitting diode (VLED) device comprising:
- an active layer between an n-doped layer and a p-doped layer, wherein both the n-doped layer and the p-doped layer include gallium nitride (GaN);
- a metal substrate adjacent the p-doped layer;
- a plurality of balls for light extraction disposed above a surface of the n-doped layer;
- and
- an optically transparent and electrically conductive contact layer disposed above the plurality of balls and configured such that a bias applied across the p-doped layer and the n-doped layer generates light that is emitted through the n-doped layer and emitted to the ambient via the contact layer.
2 more elements
A light-emitting diode (LED) device comprising:
- an n-doped layer, wherein a surface of the n-doped layer is roughened;
- an active layer for emitting light adjacent the n-doped layer;
- a p-doped layer adjacent the active layer, wherein the n-doped layer is at least about four times thicker than the p-doped layer and wherein both the n-doped layer and the p-doped layer include gallium nitride (GaN);
- a metal substrate adjacent the p-doped layer;
- a plurality of balls disposed above the roughened surface of the n-doped layer;
- and
- an optically transparent and electrically conductive contact layer disposed above the plurality of balls and configured such that a bias applied across the p-doped layer and the n-doped layer generates light that is emitted through the n-doped layer and emitted to the ambient via the contact layer.
4 more elements
Dependencies are inferred from the claim text.