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US 8,008,672 B2Granted
Light emitting device
AssigneeLG Innotek Co., Ltd.
InventorsYong Tae Moon, Chunli Liu
Life of this patent
Estimating the term…
Abstract
A light emitting device includes at least one particle over the light emitter. Light at a first wavelength travels from the emitter along a first path adjacent to the particle and at a second wavelength along a second path that passes through the particle. The particle converts the light on the second path from the first wavelength into a second wavelength. The light at the first wavelength mixes with the light at the second wavelength to form light of a third wavelength, which may be white light or another color.
Claims9
A light emitting device comprising:
- a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between first and second conductive semiconductor layers;
- a first amorphous layer on the light emitting structure;
- and
- a nano structure having a nano-size grain shape on the first amorphous layer, wherein the nano structure comprises a first nano structure on the first amorphous layer and a second nano structure on the first nano structure, and wherein the first nano structure comprises AlN or GaN and the second nano structure comprises InGaN.
1 more element
A light emitting device package comprising:
- a light emitting device including a light emitting structure having a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between first and second conductive semiconductor layers, a first amorphous layer on the light emitting structure, and a nano structure having a nano-size grain shape on the first amorphous layer;
- and
- a package body in which the light emitting device is installed, wherein the nano structure comprises a first nano structure on the first amorphous layer and a second nano structure on the first nano structure, and wherein the first nano structure comprises AlN or GaN and the second nano structure comprises InGaN.
Dependencies are inferred from the claim text.