Light emitting device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorTatsuya Honda
Life of this patent
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Abstract
An object is to provide a light emitting element using an inorganic compound as a light emitting material, which has ever-higher luminous efficiency and can be driven with low voltage. The chance of excitation of light emitting centers (atoms) in a light emitting layer is increased to enhance luminous efficiency by providing a carrier supply layer in order to increase the number of carries in the light emitting layer of a light emitting element using an inorganic compound, and drive voltage of the light emitting element or a light emitting device is reduced.
Claims18
A light emitting device comprising:
- a semiconductor layer of a transistor formed over a substrate;
- a first electrode electrically connected to the semiconductor layer of the transistor;
- a first insulating film formed over the first electrode;
- a light emitting layer formed over the first insulating film;
- a second insulating film formed over the light emitting layer;
- a second electrode formed over the second insulating film;
- and
- a first carrier supply layer and a second carrier supply layer interposed between the first and second insulating films,
- wherein the light emitting layer is directly in contact with upper and side surfaces of the first and second carrier supply layers,
- wherein the light emitting layer includes a base material and an additive material,
- wherein the first and second carrier supply layers comprise a semiconductor material including at least one of an n-type impurity element and a p-type impurity element, and
- wherein the semiconductor layer of the transistor includes a metal oxide.
A light emitting device comprising:
- a semiconductor layer of a transistor formed over a substrate;
- a first electrode electrically connected to the semiconductor layer of the transistor;
- a first insulating film formed over the first electrode;
- a light emitting layer formed over the first insulating film;
- a second insulating film formed over the light emitting layer;
- a second electrode formed over the second insulating film;
- and
- a plurality of carrier supply layers interposed between the first and second insulating films,
- wherein the light emitting layer is interposed between the plurality of carrier supply layers,
- wherein the light emitting layer is directly in contact with upper and side surfaces of the plurality of carrier supply layers,
- wherein the light emitting layer includes a base material and an additive material,
- wherein the plurality of carrier supply layers comprise a semiconductor material including at least one of an n-type impurity element and a p-type impurity element, and
- wherein the semiconductor layer of the transistor includes a metal oxide.
Dependencies are inferred from the claim text.