Doped diamond LED devices and associated methods
OwnerChien-Min Sunginventor
Life of this patent
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Abstract
LED devices and methods for making such devices are provided. One such method may include forming epitaxially a substantially single crystal SiC layer on a substantially single crystal Si wafer, forming epitaxially a substantially single crystal diamond layer on the SiC layer, doping the diamond layer to form a conductive diamond layer, removing the Si wafer to expose the SiC layer opposite to the conductive diamond layer, forming epitaxially a plurality of semiconductor layers on the SiC layer such that at least one of the semiconductive layers contacts the SiC layer, and coupling an n-type electrode to at least one of the semiconductor layers such that the plurality of semiconductor layers is functionally located between the conductive diamond layer and the n-type electrode.
Claims19
An LED device, comprising:
- a p-type conductive diamond layer;
- a SiC layer coupled to the diamond layer;
- a light reflective layer coupled to the conductive diamond layer on a surface that is opposite the SiC layer;
- a plurality of semiconductor layers, at least one of which is coupled to the SiC layer;
- and
- an n-type electrode coupled to at least one of the plurality of semiconductor layers.
A method of making an LED device, comprising:
- forming epitaxially a substantially single crystal SiC layer on a substantially single crystal Si wafer;
- forming epitaxially a substantially single crystal diamond layer on the SiC layer;
- doping the diamond layer to form a p-type conductive diamond layer;
- coupling a light reflective layer to the conductive diamond layer opposite the SiC layer;
- removing the Si wafer to expose the SiC layer opposite to the diamond layer;
- depositing epitaxially a plurality of semiconductor layers on the SiC layer such that at least one of the semiconductive layers contacts the SiC layer;
- and
- coupling an n-type electrode to at least one of the semiconductor layers, such that the plurality of semiconductor layers is functionally located between the p-type conductive diamond layer and the n-type electrode.
An LED device, comprising:
- a p-type conductive diamond layer;
- a substantially single crystal SiC layer coupled to the diamond layer;
- a light reflective layer coupled to the conductive diamond layer on a surface that is opposite the SiC layer;
- a plurality of nitride semiconductor layers epitaxially coupled to the SiC layer;
- and
- an n-type electrode coupled to at least one of the nitride semiconductor layers, such that the plurality of nitride semiconductor layers is functionally located between the conductive diamond layer and the n-type electrode.
An LED device, comprising:
- a p-type conductive diamond layer;
- a SiC layer coupled to the diamond layer;
- a plurality of semiconductor layers, at least one of which is coupled to the SiC layer;
- an n-type electrode coupled to at least one of the plurality of semiconductor layers;
- a diamond substrate coupled to the plurality of semiconductor layers opposite to the p-type conductive diamond layer;
- and
- a reflective layer coupled to the diamond substrate and oriented to reflect light toward the p-type conductive diamond layer.
A method of making an LED device, comprising:
- forming epitaxially a substantially single crystal SiC layer on a substantially single crystal Si wafer;
- forming epitaxially a substantially single crystal diamond layer on the SiC layer;
- doping the diamond layer to form a p-type conductive diamond layer;
- removing the Si wafer to expose the SiC layer opposite to the diamond layer;
- depositing epitaxially a plurality of semiconductor layers on the SiC layer such that at least one of the semiconductive layers contacts the SiC layer;
- coupling an n-type electrode to at least one of the semiconductor layers, such that the plurality of semiconductor layers is functionally located between the p-type conductive diamond layer and the n-type electrode;
- coupling a diamond substrate to the plurality of semiconductor layers opposite to the p-type conductive diamond layer;
- and
- coupling a reflective layer to the diamond substrate oriented to reflect light toward the p-type conductive diamond layer.
Dependencies are inferred from the claim text.