Semiconductor display device

A display device comprising:

• a thin film transistor;
• and
• a capacitor,
• wherein the thin film transistor comprises:
• a gate electrode;
• a first insulating film over the gate electrode;
• a channel region over the gate electrode with the first insulating film interposed therebetween;
• and
• a source region and a drain region with the channel region therebetween,
• a second inorganic insulating film comprising silicon nitride so as to cover the thin film transistor, wherein the second inorganic insulating film has a first opening;
• an organic resin film over the second inorganic insulating film, wherein the organic resin film has at least a second opening and a third opening;
• a third inorganic insulating film comprising silicon nitride over the organic resin film, wherein the third inorganic insulating film has a fourth opening;
• wherein the first opening and the fourth opening are overlapped with the second opening, and
• wherein the capacitor comprises:
• a first conductive film, wherein the first conductive film is the same material as the gate electrode;
• the first insulating film over the first conductive film;
• the second inorganic insulating film over the first insulating film;
• the third inorganic insulating film on and in contact with the second inorganic insulating film;
• and
• a second conductive film over the first conductive film with the first insulating film, the second inorganic insulating film and the third inorganic insulating film interposed therebetween,
• wherein the third opening is provided over the first conductive film,
• wherein the second conductive film is provided in the third opening,
• wherein the second conductive film is electrically connected to the source region or the drain region through the first opening, the second opening and the fourth opening.

A display device comprising:

• a gate electrode;
• a first capacitor electrode, wherein the first capacitor electrode is the same material as the gate electrode;
• a first insulating film over the gate electrode and the first capacitor electrode;
• a channel region over the gate electrode with the first insulating film interposed therebetween;
• and
• a source region and a drain region with the channel region therebetween,
• a second inorganic insulating film comprising silicon nitride over the first insulating film, the channel region, the source region and the drain region, wherein the second inorganic insulating film has a first opening;
• an organic resin film over the second inorganic insulating film, wherein the organic resin film has at least a second opening,;
• a third inorganic insulating film comprising silicon nitride over the organic resin film, wherein the third inorganic insulating film has a third opening;
• and
• a second capacitor electrode over the third inorganic insulating film,
• wherein the first opening and the third opening are overlapped with the second opening, and
• wherein the first insulating film, the second inorganic insulating film, the organic resin film and the third inorganic insulating film are interposed between the first capacitor electrode and the second capacitor electrode, and
• wherein the second capacitor electrode is electrically connected to the source region or the drain region through the first opening, the second opening and the third opening.