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US 8,008,655 B2Granted
Nitride compound semiconductor device including organic semiconductor layer under gate electrode
AssigneeSanken Electric Co., Ltd.
InventorShinichi Iwakami
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Abstract
A nitride compound semiconductor device includes a semiconductor layer including a group III nitride compound semiconductor, source and drain electrodes provided on the semiconductor layer, an insulating film provided on the semiconductor layer between the source electrode and the drain electrode, an organic semiconductor layer in contact with the semiconductor layer at an opening provided for the insulating film, and a gate electrode provided on the organic conductive layer at the opening.
Claims14
A nitride compound semiconductor device, comprising:
- a semiconductor layer including a group III nitride compound semiconductor;
- source and drain electrodes provided on the semiconductor layer;
- an insulating film provided on the semiconductor layer between the source electrode and the drain electrode;
- an organic semiconductor layer in direct contact with the semiconductor layer at an opening provided for the insulating film;
- and
- a gate electrode provided on the organic semiconductor layer at the opening,
- wherein the semiconductor layer includes:
- a carrier supply layer;
- and
- a carrier travel layer forming a heterojunction with the carrier supply layer,
- wherein a two-dimensional carrier gas layer is formed near an interface with the carrier supply layer in the carrier travel layer.
8 more elements
A nitride compound semiconductor device, comprising:
- a semiconductor layer including a group III nitride compound semiconductor;
- an organic semiconductor layer directly between the semiconductor layer and a gate electrode;
- source and drain electrodes provided on the semiconductor layer;
- and
- an insulating film provided on the semiconductor layer between the source electrode and the drain electrode, wherein the insulating film is a silicon oxide film,
- wherein the semiconductor layer includes:
- a carrier supply layer;
- and
- a carrier travel layer forming a heterojunction with the carrier supply layer,
- wherein a two-dimensional carrier gas layer is formed near an interface with the carrier supply layer in the carrier travel layer.
7 more elements
Dependencies are inferred from the claim text.