Thin-film transistor device and a method for manufacturing the same

The thin-film transistor comprising:

• an n-type TFT;
• and
• a p-type TFT;
• wherein a semiconductor film for forming a channel is made of the same material for both the n-type TFT and the p-type TFT;
• source and drain electrodes in the n-type TFT and the p-type TFT are made of the same material;
• and
• either one or both of the n-type TFT and the p-type TFT have a first polarizable thin film on an interface between a gate insulator and a semiconductor and also have a second polarizable thin film on an interface between the source and drain electrodes and the semiconductor film,
• wherein the first polarizable thin film is made of molecules having a silane coupling group and a polarized group, the silane coupling group adheres to a surface of the gate insulator comprising an Si oxide film or a metal oxide film, and an orientation of the dipole vector generated due to polarization is substantially perpendicular to the surface of the gate insulator.

The thin-film transistor device comprising:

• an n-type TFT;
• and
• a p-type TFT;
• wherein a semiconductor film for forming a channel is made of the same material for both the n-type TFT and the p-type TFT;
• source and drain electrodes in the n-type TFT and the p-type TFT are made of the same material;
• and
• either one or both of the n-type TFT and the p-type TFT have a first polarizable thin film on an interface between a gate insulator and a semiconductor and also have a second polarizable thin film on an interface between the source and drain electrodes and the semiconductor film,
• wherein the second polarizable thin film is made of molecules each having an SH group and the polarized group, the SH group adheres to surfaces of the source electrode and drain electrodes, and an orientation of the dipole vector generated due to polarization is substantially perpendicular to the surfaces of the electrodes.

A thin-film transistor device comprising:

• a gate electrode;
• a gate insulator formed on the gate electrode;
• an n-type TFT;
• and
• a p-type TFT;
• wherein source and drain electrodes for both the n-type TFT and the p-type TFT are comprised of the same material by self-alignment of the source and drain electrodes to the gate electrode;
• wherein the first and second polarizable thin films are formed on each of the gate insulator, the source and drain electrode, after the gate electrode, the gate insulator, and the source and drain electrodes are formed;
• wherein a semiconductor film for forming a channel is comprised of the same material for both the n-type TFT and the p-type TFT, after an area of either the n-type TFT or the p-type TFT is selectively exposed to light to remove the polarizing function from the first and second polarizable thin-films including in the exposed area;
• and
• wherein the polarizable thin films are configured so that orientations and/or difference in potential of dipole vectors generated due to polarization are different in the n-type and p-type TFT.