Resistive organic memory device and fabrication method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsKwang Hee Lee, Tae Lim Choi, Won Jae Joo, Sang Kyun Lee
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Abstract
Disclosed herein are an organic memory device and a method for fabricating the memory device. The organic memory device may include a first electrode, a second electrode and an organic active layer between first and second electrodes, wherein the organic active layer is formed of a mixture of a conductive polymer and a metallocene compound. Because the organic memory device possesses decreased switching time, decreased operating voltage, decreased fabrication costs and increased reliability, the organic memory device may be used as a highly integrated large-capacity memory device.
Claims28
An organic active layer comprising:
- a mixture of a conductive polymer and a metallocene compound of Formula 1 below:
- CpMCp′ (1)
- wherein Cp and Cp′ are each independently one of cyclopentadienyl and indenyl which is one of unsubstituted and substituted with at least one substituent selected from R and OR, in which each R, which is one of identical and different, is one of C1-20 alkyl, C3-20 cycloalkyl, C5-30 heterocycloalkyl, C2-20 alkenyl, C6-20 aryl, C5-30 heteroaryl, C7-20 arylalkyl and C7-30 heteroarylalkyl,
- M is Zr, and
- the organic active layer is a bistable element configured to switch between a high resistance state and a low resistance state based on an applied voltage.
An organic memory device, comprising:
- a first electrode;
- a second electrode;
- and
- an organic active layer between the first and second electrodes,
- wherein the organic active layer is formed of a mixture of a conductive polymer and a metallocene compound of Formula 1 below:
- CpMCp′ (1),
- wherein Cp and Cp′ are each independently one of cyclopentadienyl and indenyl which is one of unsubstituted and substituted with at least one substituent selected from R and OR in which each R, which is one of identical and different, is one of C1-20 alkyl, C3-20 cycloalkyl, C6-30 heterocycloalkyl, C2-20 alkenyl, C6-20 aryl, C5-30 heteroaryl, C7-20 arylalkyl and C7-30 heteroarylalkyl,
- M is Zr, and
- the organic active layer is a bistable element configured to switch between a high resistance state and a low resistance state based on an applied voltage.
A method for fabricating a memory device comprising:
- forming a first electrode, a second electrode and an organic active layer between the first and second electrodes on a substrate,
- wherein the organic active layer includes a mixture of a conductive polymer and a metallocene compound of Formula 1 below:
- CpMCp′ (1),
- wherein Cp and Cp′ are each independently one of cyclopentadienyl and indenyl which is one of unsubstituted and substituted with at least one substituent selected from R and OR, in which each R, which is one of identical and different, is one of C1-20 alkyl, C3-20 cycloalkyl, C5-30 heterocycloalkyl, C2-20 alkenyl, C6-20 aryl, C5-30 heteroaryl, C7-20 arylalkyl and C7-30 heteroarylalkyl,
- M is Zr, and
- the organic active layer is a bistable element configured to switch between a high resistance state and a low resistance state based on an applied voltage.
An organic memory device, comprising:
- a first electrode;
- a second electrode;
- and
- an organic active layer between the first and second electrodes,
- wherein the organic active layer is formed of a mixture of a conductive polymer and a metallocene compound of Formula 1 below:
- CpMCp′ (1),
- wherein Cp and Cp′ are indenyl which is one of unsubstituted and substituted with at least one substituent selected from R and OR in which each R, which is one of identical and different, is one of C1-20 alkyl, C3-20 cycloalkyl, C5-30 heterocycloalkyl, C2-20 alkenyl, C6-20 aryl, C5-30 heteroaryl, C7-20 arylalkyl and C7-30 heteroarylalkyl, and
- M is Zr.
Dependencies are inferred from the claim text.