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US 8,008,650 B2Granted
Transistor with nanotube structure exhibiting N-type semiconductor-like characteristics
AssigneeJapan Science and Technology Agency
InventorsKazuhiko Matsumoto, Atsuhiko Kojima, Satoru Nagao
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Abstract
An object of the present invention is to provide a new n-type transistor, different from the prior art, using a channel having a nanotube-shaped structure, and having n-type semiconductive properties. To realize this, a film of a nitrogenous compound 6 is formed directly on a channel 5 of a transistor 1 comprising a source electrode 2, a drain electrode 3, a gate electrode 4 and the n-type channel 5 having a nanotube-shaped structure and provided between the source electrode 2 and the drain electrode 3.
Claims14
An n-type transistor comprising:
- a source electrode;
- a drain electrode;
- a gate electrode;
- an n-type channel which has a nanotube-shaped structure and is provided between said source electrode and said drain electrode;
- and
- a film of a nitrogenous compound which is formed directly on said channel while being heated, wherein
- said channel is a channel which is converted from p-type to n-type at the time of film formation of the nitrogenous compound.
4 more elements
An n-type transistor sensor comprising:
- a source electrode;
- a drain electrode;
- a gate electrode;
- an n-type channel which has a nanotube-shaped structure and is provided between said source electrode and said drain electrode;
- and
- a film of a nitrogenous compound which is formed directly on said channel while being heated, wherein
- said channel is a channel which is converted from p-type to n-type at the time of film formation of the nitrogenous compound and said sensor detects a target object to be detected as a variation of a current flowing through said channel.
4 more elements
Dependencies are inferred from the claim text.