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US 8,008,646 B2Granted
Light emitting diode
AssigneesLG Electronics Inc., LG Innotek Co., Ltd.
InventorSee jong Leem
Life of this patent
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Abstract
A light emitting diode is disclosed, wherein the light extraction efficiency of a device can be enhanced by forming patterns on a substrate, a light emitting structure is formed on the substrate formed with the patterns, the substrate is removed from the light emitting structure, and patterns corresponding to those formed on the substrate are formed on the light emitting structure.
Claims28
A vertical topology light emitting diode, comprising:
- a support layer;
- a bonding layer on the support layer;
- a UBM layer on the bonding layer, the UBM layer having a multi-layer structure, wherein the UBM layer has a surface facing the bonding layer, and wherein the shortest distance between the surface of the UBM layer and the support structure is substantially constant over the entire surface of the UBM layer;
- a first electrode on the UBM layer;
- a first-type semiconductor layer on the first electrode;
- an active layer on the first-type semiconductor layer;
- a second-type semiconductor layer on the active layer, the second-type semiconductor layer comprising a light extraction pattern having a non-periodic structure;
- and
- a second electrode on the second-type semiconductor layer.
6 more elements
A vertical topology light emitting diode comprising:
- a semiconductor sub-mount having at least one electrical contact;
- a UBM layer on the sub-mount, the UBM layer comprising at least two metals;
- a first electrode on the UBM layer;
- a semiconductor layer having a multi-layer structure, the semiconductor layer comprising a light extraction pattern having a periodic structure and non-periodic structures within the periodic structure;
- and
- a second electrode on the semiconductor layer.
3 more elements
Dependencies are inferred from the claim text.