Ion implantation with diminished scanning field effects
AssigneeAxcelis Technologies, Inc.
InventorEdward C. Eisner
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Abstract
Ion implantation systems and scanning systems are provided, in which a focus adjustment component is provided to adjust a focal property of an ion beam to diminish zero field effects of the scanner upon the ion beam. The focal property may be adjusted in order to improve the consistency of the beam profile scanned across the workpiece, or to improve the consistency of the ion implantation across the workpiece. Methods are disclosed for providing a scanned ion beam to a workpiece, comprising scanning the ion beam to produce a scanned ion beam, adjusting a focal property of an ion beam in relation to zero field effects of the scanner upon the ion beam, and directing the ion beam toward the workpiece.
Claims20
An ion implantation system for implanting ions in a workpiece, comprising:
- an ion beam source configured to generate an ion beam;
- a mass analyzer for mass analyzing the ion beam generated;
- a scanner configured to scan the ion beam across the workpiece;
- a focus adjustment component comprising an adjustment field configured to adjust at least one focal property of the ion beam with respect to a zero-field effect of the scanner upon the ion beam;
- and
- a power source configured to provide a pulsed waveform to the focus adjustment component at twice a frequency of the scanner scanning of the ion beam, wherein a timing of the pulsed waveform substantially coincides with a position of the scanned ion beam that experiences the zero-field effect.
A scanning system for providing an ion beam to a workpiece in an ion implantations system, the scanning system comprising:
- a scanner configured to receive an ion beam and to produce a scanned ion beam directed toward the workpiece;
- a beam profiling component configured to measure a profile property of the ion beam;
- a focus adjustment component configured to adjust a focal property of the ion beam in relation to the profile property measured by the beam profiling component;
- wherein the focus adjustment component comprises an adjustment field associated therewith for counteracting zero field effects, and is configured to vary the adjustment field to adjust the focal property;
- and
- a power source configured to provide a pulsed waveform to the focus adjustment component at twice a frequency of the scanner scanning of the ion beam, wherein a timing of the pulsed waveform substantially coincides with a position of the scanned ion beam that experiences the zero-field effect.
A method of providing an ion beam in an ion implantation system, the method comprising:
- generating an ion beam;
- scanning the ion beam generated with a scan field to produce a scanned ion beam;
- measuring a focal property of the ion beam;
- determining zero field effects from the focal property measured;
- and
- adjusting the focal property of the ion beam with respect to the zero-field effects by varying an adjustment field strength generated by an adjustment field component,
- wherein the adjusting of the focal property is performed by a pulsed waveform to a focus adjustment component at twice a frequency of the scanning of the ion beam, wherein a timing of the pulsed waveform substantially coincides with a position of the scanned ion beam that experiences the zero-field effect.
Dependencies are inferred from the claim text.