Neutron detector with gamma ray isolation
AssigneeThe United States of America as represented by the Secretary of the Navy
InventorsFrancis J Kub, Bernard F Phlips, Karl D Hobart, Eric A Wulf
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Abstract
A silicon-on-insulator (SOI) neutron detector comprising a silicon-on-insulator structure, wherein the silicon-on-insulator structure consists of an active semiconductor layer, a buried layer, and a handle substrate, a lateral carrier transport and collection detector structure within the active semiconductor layer of the silicon-on-insulator structure, and a neutron to high energy particle converter layer on the active semiconductor layer.
Claims26
A silicon-on-insulator (SOI) neutron detector comprising:
- a silicon-on-insulator structure,
- wherein the silicon-on-insulator structure consists of
- an active semiconductor layer,
- a buried layer consisting of one selected from the group consisting of a silicon oxide, an insulator, a silicon nitride, a metal oxide, and combinations thereof, and
- a handle substrate;
- a lateral carrier transport and collection detector structure within the active semiconductor layer of the silicon-on-insulator structure;
- and
- a neutron to high energy particle converter layer to generate energetic particles above the active semiconductor layer;
- wherein the lateral carrier transport and collection detector structure within the active semiconductor layer of the silicon-on-insulator structure has a high immunity to gamma ray generated carriers,
- wherein the lateral carrier transport and collection detector structure within the active semiconductor layer of the silicon-on-insulator structure has a fast rise time neutron detector response,
- wherein the lateral carrier transport and collection detector structure within the active semiconductor layer of the silicon-on-insulator structure can detect either a thermal neutron or a fast neutron.
A method of making a silicon-on-insulator (SOI) neutron detector comprising:
- providing a silicon-on-insulator structure,
- wherein the silicon-on-insulator structure consists of
- an active semiconductor layer,
- a buried layer consisting of one selected from the group consisting of a silicon oxide, an insulator, a silicon nitride, a metal oxide, and combinations thereof, and
- a handle substrate;
- implementing a lateral carrier transport and collection detector structure within the active semiconductor layer of the silicon-on-insulator structure;
- and
- implementing a neutron to high energy particle converter layer to generate energetic particles above the active semiconductor layer;
- wherein the lateral carrier transport and collection detector structure within the active semiconductor layer of the silicon-on-insulator structure has a high immunity to gamma ray generated carriers,
- wherein the lateral carrier transport and collection detector structure within the active semiconductor layer of the silicon-on-insulator structure has a fast rise time neutron detector response,
- wherein the lateral carrier transport and collection detector structure within the active semiconductor layer of the silicon-on-insulator structure can detect either a thermal neutron or a fast neutron.
Dependencies are inferred from the claim text.