Electron beam apparatus and method of generating an electron beam irradiation pattern
AssigneesHitachi High-Technologies Corporation, Canon Kabushiki Kaisha
InventorsRyo Fujita, Haruo Yoda, Kimiaki Ando, Yuji Inoue, Masato Muraki
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Abstract
High-contrast exposure is performed by use of a small dose of electron beams, a pattern is formed on a wafer with high accuracy, and high-precision inspection is performed. In pattern formation, proximity effect correction processing is performed. Moreover, exposure of electron beams is performed based on a result of filtering using an inverse characteristic of exposure characteristics of the electron beams. Furthermore, in pattern inspection, electron beams are irradiated based on a result of filtering for obtaining a peripheral region of an edge of the pattern formed.
Claims3
An electron beam apparatus which irradiates finely focused electron beams onto a sample, detects a sample signal emitted from the sample, and observes a shape of a sample surface, comprising:
- edge determination means for determining an edge of a pattern drawn on a sample;
- means for obtaining a peripheral region of the determined edge;
- and
- means for controlling a dose of electron beams so as to differ between the obtained peripheral region and those other than the peripheral region.
Dependencies are inferred from the claim text.