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US 8,008,213 B2Granted
Self-assembly process for memory array
AssigneeSanDisk 3D LLC
InventorsLi Xiao, Jingyan Zhang, Huicai Zhong
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Abstract
A method of making a device includes forming at least one anodizable metal layer over at least one of an electrode or a semiconductor device, forming a plurality of pores in the anodizable metal layer by anodization of the anodizable metal layer to expose a portion of the electrode or semiconductor device, and filling at least one pore with a rewritable material such that at least some of the rewritable material is in electrical contact with the electrode or semiconductor device.
Claims7
A method of making a device, comprising:
- forming at least one anodizable metal layer over a semiconductor device;
- forming a plurality of pores in the anodizable metal layer by anodization of the anodizable metal layer to expose a portion of the semiconductor device;
- filling at least one pore with a rewritable material such that at least some of the rewritable material is in electrical contact with the semiconductor device;
- forming a second anodizable metal layer under the first anodizable metal layer before the step of forming the first anodizable metal layer;
- forming a plurality of pores in the second anodizable metal layer by anodization of the second anodizable metal layer;
- and
- forming the semiconductor device comprising a p-i-n diode in at least one pore in the second anodized metal layer.
4 more elements
Dependencies are inferred from the claim text.