Fabrication methods for integration CMOS and BJT devices
AssigneeVanguard International Semiconductor Corporation
InventorsChien-Hsien Song, Yung-Lung Chou, Yu-Hsun Chen, Cheng-Che Tsai
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Abstract
Fabrication methods for integrating CMOS and BJT devices are presented. A semiconductor substrate having a first region and a second region are provided, wherein the first region includes a CMOS device, and the second region includes a BJT device. A dielectric layer is conformably deposited on the semiconductor substrate. Part of the dielectric layer is removed, thereby forming sidewall spacers on a gate structure of the CMOS device and remaining a thin dielectric layer on the BJT device. The remaining thin dielectric layer is completely removed, completing integration of the CMOS device and the BJT device.
Claims6
A fabrication method for integrating CMOS and BJT devices, comprising:
- providing a semiconductor substrate having a first region and a second region, wherein the first region comprises a CMOS device, and wherein the second region comprises a BJT device;
- conformably depositing a dielectric layer on the semiconductor substrate;
- removing a portion of the dielectric layer, thereby creating sidewall spacers on a gate structure of the CMOS device and leaving a thin film portion of the dielectric layer on the BJT device;
- and
- completely removing the thin film portion of the dielectric layer such that integration of the CMOS device and the BJT device is completed.
Dependencies are inferred from the claim text.