Method to create a metal pattern using a damascene-like process

A method of forming a metal pattern on a semiconductor device structure, comprising:

• removing a portion of a dielectric material overlying a bond pad to form at least one trench within the dielectric material and positioned over the bond pad, a lowermost portion of the at least one trench defined by a portion of the dielectric material, the portion of the dielectric material positioned between the at least one bond pad and the at least one trench;
• forming a metal material over the dielectric material and into the at least one trench;
• forming a photoresist material filling the at least one trench and leaving the metal material overlying elevated surfaces of the dielectric material exposed;
• and
• removing portions of the metal material from elevated surfaces of the dielectric material to form a metal pattern overlying the bond pad.

A method of forming a metal pattern on a photosensitive, insulative material, comprising:

• removing a portion of a photosensitive, insulative material to form at least one trench in the photosensitive, insulative material overlying at least one bond pad, another portion of the photosensitive, insulative material positioned over the at least one bond pad remaining between the at least one bond pad and the at least one trench;
• forming a metal material over the photosensitive, insulative material and into the at least one trench;
• forming a photoresist material over the metal material;
• removing a portion of the photoresist material to expose elevated areas of the metal material such that a remaining portion of the photoresist material does not extend beyond sidewalls of the at least one trench and onto the elevated areas of the metal material;
• and
• removing the metal material exposed laterally beyond the remaining portion of the photoresist material.