Manufacturing method of semiconductor device and semiconductor manufacturing apparatus therefor

A manufacturing method of a semiconductor device, comprising the steps of:

• (a) forming a semiconductor element over a first main surface of a semiconductor substrate having the first main surface and a second main surface opposite to each other along a thickness direction;
• (b) depositing a first metal film over the second main surface of the semiconductor substrate;
• (c) carrying out heat treatment to alloy the interface between the first metal film and the semiconductor substrate and thereby form a first conductor film;
• (d) depositing a second conductor film to cover the first conductor film therewith;
• and
• (e) depositing a third conductor film to cover the second conductor film therewith,
• wherein in the step (d), the second conductor film is deposited using a conductor film having nickel as a principal component,
• wherein in the step (e), the third conductor film is deposited using a conductor film having gold as a principal component,
• wherein the step (c) is performed after the step (b) but at least prior to the step (d), and
• wherein the steps (b) to (e) are performed in the same processing apparatus in order to prevent exposure of the semiconductor substrate to the atmosphere during the steps,
• wherein in the step (b), a first metal film is deposited using a metal film having nickel as a principal component,
• wherein in the step (c), the heat treatment is carried out while supporting the semiconductor substrate with a support containing quartz,
• further including, after the step (b) but prior to the step (d), a step of:
• (f) depositing a fourth conductor film over the second main surface of the semiconductor substrate,
• wherein in the step (d), the second conductor film is deposited over the fourth conductor film, and
• wherein in the step (f), the fourth conductor film is deposited using a conductor film having titanium or tungsten or a compound thereof as a principal component,
• wherein the step (c) is performed after the step (b) but prior to the step (f), and
• wherein in the step (f), the fourth conductor film is deposited so as to cover the first conductor film over the second main surface of the semiconductor substrate,
• further including, after the step (a) prior to the step (b), a step of:
• (g) grinding the second main surface of the semiconductor substrate to thin the semiconductor substrate, and
• wherein in the step (d), the second conductor film is deposited while cooling the semiconductor substrate.