Conductive interconnect structures and formation methods using supercritical fluids
AssigneeMicron Technology, Inc.
InventorMarc Sulfridge
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AssigneeMicron Technology, Inc.
InventorMarc Sulfridge
Estimating the term…
Conductive interconnect structures and formation methods using supercritical fluids are disclosed. A method in accordance with one embodiment of the invention includes forming a via in a substrate, with the via having a width and a length generally transverse to the width, and with a length being approximately 100 microns or more. The method can further include disposing a conductive material in the via while the via is exposed to a supercritical fluid. For example, copper can be disposed in the via by introducing a copper-containing precursor into the supercritical fluid and precipitating the copper from the supercritical fluid. Interconnect structures can be formed using this technique in a single generally continuous process, and can produce conductive structures having a generally uniform grain structure across the width of the via.
A method for processing a substrate having a bond site at a first surface and a second surface opposite the first surface, comprising:
A method for processing a substrate, comprising:
A method for processing a substrate, comprising:
Dependencies are inferred from the claim text.