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US 8,008,190 B2Granted
Method of manufacturing semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsNobuhide Yamada, Hideto Matsuyama, Hideshi Miyajima
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Abstract
Disclosed is a method of manufacturing a semiconductor device which includes: providing an insulating film formed above a semiconductor substrate with a processed portion; supplying a surface of the processed portion of the insulating film with a primary reactant from a reaction of a raw material including at least a Si-containing compound; and subjecting the primary reactant to dehydration condensation to form a silicon oxide film on the surface of the processed portion.
Claims5
A method of manufacturing a semiconductor device, comprising:
- providing an insulating film formed above a semiconductor substrate with a processed portion;
- supplying an oxygen-source material to adhere to a surface of the processed portion of the insulating film in a liquid state to form a liquid film and, after the supply of the oxygen-source material is stopped, supplying a Si-containing compound to react the Si-containing compound with the oxygen-source material on the surface of the processed portion to supply a fluid silanol from a reaction of a raw material including at least the Si-containing compound and the oxygen-source material;
- and
- subjecting the fluid silanol to dehydration condensation to form a silicon oxide film on the surface of the processed portion.
1 more element
Dependencies are inferred from the claim text.