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US 8,008,189 B2Granted
Semiconductor device manufacturing method, semiconductor device, and semiconductor wafer structure
AssigneeFujitsu Semiconductor Limited
InventorKouichi Nagai
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Abstract
A semiconductor device manufacturing method, includes the steps of forming an insulating film over a semiconductor substrate, thinning selectively a thick portion, whose film thickness is thicker than a reference value, of the insulating film, forming contact holes in a thinned portion of the insulating film 25, and forming conductive plugs in the contact holes.
Claims17
A semiconductor device manufacturing method, comprising:
- forming an insulating film over a semiconductor substrate;
- thinning selectively a thick portion, whose film thickness is thicker than a reference value, of the insulating film;
- forming a hole in the thinned portion of the insulating film;
- and
- forming a conductive plug in the hole, wherein
- in the forming of the insulating film, in a global in-plane distribution of a film thickness of the insulating film, the film thickness is increased toward a peripheral area from a center area of the semiconductor substrate.
3 more elements
A semiconductor device manufacturing method, comprising:
- forming an insulating film over a semiconductor substrate;
- thinning selectively a thick portion, whose film thickness is thicker than a reference value, of the insulating film;
- forming a hole in the thinned portion of the insulating film;
- and
- forming a conductive plug in the hole, wherein
- in the forming of the insulating film, in a global in-plane distribution of a film thickness of the insulating film, the film thickness is increased from a peripheral area to a center area of the semiconductor substrate.
3 more elements
Dependencies are inferred from the claim text.