Method for reducing dielectric overetch using a dielectric etch stop at a planar surface

A method for forming first conductors above first pillars, the method comprising:

• forming a first dielectric material between the first pillars;
• forming a recess in the first dielectric material;
• forming a dielectric etch stop layer in the recess;
• forming a substantially planar surface, the substantially planar surface coexposing the first pillars and the dielectric etch stop layer between the first pillars;
• depositing a second dielectric material on the planar surface;
• etching a plurality of trenches in the second dielectric material, wherein the etch is selective between the dielectric etch stop layer and the second dielectric material;
• and
• forming the first conductors in the trenches.

A method for minimizing dielectric overetch in a monolithic three dimensional memory array, the method comprising:

• forming a first memory level by:
• forming first bottom conductors;
• forming first pillars above the first bottom conductors, the first pillars separated by a first dielectric material;
• forming recesses in the first dielectric material;
• depositing a second dielectric material in the recesses and on the first pillars;
• etching trenches in the second dielectric material, wherein the etch is selective between the first dielectric material and the second dielectric material;
• and
• forming first top conductors in the trenches;
• and
• monolithically forming at least a second memory level above the first memory level.