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US 8,008,186 B2Granted
Semiconductor device and method of fabricating the same
AssigneeKabushiki Kaisha Toshiba
InventorsKazumichi Tsumura, Masaki Yamada
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Abstract
A semiconductor device according to an embodiment of the present invention includes a semiconductor substrate; a wiring formed in predetermined pattern above the semiconductor substrate, a first insulating film lying right under the wiring, and a second insulating film lying in a peripheral portion other than a portion right under the wiring, in which a surface layer of the first insulating film lying in a boundary surface between the first insulating film and the second insulating film is chemically modified to reinforce the surface layer.
Claims15
A method of fabricating a semiconductor device, comprising:
- forming a first insulating film;
- forming a wiring in the first insulating film;
- removing the first insulating film with a portion of the first insulating film right under the wiring being left to form a trench;
- repairing a damage of a portion exposed on the trench of the first insulating film left right under the wiring;
- and
- forming a second insulating film having a relative dielectric constant lower than that of the first insulating film in the trench.
3 more elements
Dependencies are inferred from the claim text.