Semiconductor device manufacturing method, semiconductor manufacturing apparatus and storage medium

A semiconductor device manufacturing method comprising:

• reducing or removing a natural oxide of copper on a surface of a lower layer conductive path exposed at a bottom of a recess formed in an interlayer insulating film of a surface of a substrate by supplying an organic acid to the substrate;
• forming an oxygen supplying layer in the recess from organic acid;
• forming a seed layer having a self-forming barrier metal along a wall surface of the recess on the substrate from which the natural oxide is reduced or removed;
• after forming the oxygen supplying layer, burying, in the recess, copper forming an upper layer conductive path electrically connected to the lower layer conductive path via the seed layer;
• and
• heating the substrate,
• wherein until the seed layer is formed after the natural oxide of copper is reduced or removed, a formation of the natural oxide of copper is suppressed in an atmosphere to which the substrate is exposed.