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US 8,008,178 B2Granted
Method for fabricating semiconductor device with an intermediate stack structure
AssigneeHynix Semiconductor Inc.
InventorsKwan-Yong Lim, Hong-Seon Yang, Heung-Jae Cho, Tae-Kyung Kim, Yong-Soo Kim, Min-Gyu Sung
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Abstract
A method for fabricating a semiconductor device includes forming a first conductive layer over a substrate, forming an intermediate structure over the first conductive layer, the intermediate structure formed in a stack structure comprising at least a first metal layer and a nitrogen containing metal silicide layer, and forming a second conductive layer over the intermediate structure.
Claims25
A method for fabricating a semiconductor device, the method comprising:
- forming a first conductive layer over a substrate;
- forming an intermediate structure over the first conductive layer, the intermediate structure formed in a stack structure comprising a first metal layer and a nitrogen containing metal silicide layer formed over the first metal layer, wherein the nitrogen containing metal silicide layer is formed directly on a layer chosen from the group consisting of a nitrogen containing tungsten layer, a nitrogen containing titanium tungsten layer, a titanium layer, a tantalum layer, a nitrogen containing titanium layer, and a nitrogen containing tantalum layer;
- and
- forming a second conductive layer over the intermediate structure.
1 more element
A method for fabricating a semiconductor device, the method comprising:
- forming a first conductive layer over a substrate;
- forming an intermediate structure over the first conductive layer, the intermediate structure formed in a stack structure comprising a first metal layer, a second metal layer, a metal silicide layer, and a third metal layer formed sequentially over the first conductive layer, wherein the metal silicide layer is formed directly on a layer chosen from the group consisting of a nitrogen containing tungsten layer, and a nitrogen containing titanium tungsten layer;
- and
- forming a second conductive layer over the intermediate structure.
1 more element
Dependencies are inferred from the claim text.