US 8,008,174 B2 · Continuous feed chemical vapor deposition

Abstract

Embodiments of the invention generally relate to a method for forming a multi-layered material during a continuous chemical vapor deposition (CVD) process. In one embodiment, a method for forming a multi-layered material during a continuous CVD process is provided which includes continuously advancing a plurality of wafers through a deposition system having at least four deposition zones. Multiple layers of materials are deposited on each wafer, such that one layer is deposited at each deposition zone. The methods provide advancing each wafer through each deposition zone while depositing a first layer from the first deposition zone, a second layer from the second deposition zone, a third layer from the third deposition zone, and a fourth layer from the fourth deposition zone. Embodiments described herein may be utilized to form an assortment of materials on wafers or substrates, especially for forming Group III/V materials on GaAs wafers.

Claims32

Dependent claims

A method for forming a multi-layered material, comprising:

advancing a plurality of wafers through a deposition system, wherein the deposition system comprises a first deposition zone, a second deposition zone, a third deposition zone, and a fourth deposition zone;
depositing a buffer layer on a first wafer within the first deposition zone;
depositing a sacrificial layer on the first wafer within the second deposition zone, while depositing the buffer layer on a second wafer within the first deposition zone;
depositing a passivation layer on the first wafer within the third deposition zone, while depositing the sacrificial layer on the second wafer within the second deposition zone, and while depositing the buffer layer on a third wafer within the first deposition zone;
and
depositing a gallium arsenide active layer on the first wafer within the fourth deposition zone by an epitaxial process, while depositing the passivation layer on the second wafer within the third deposition zone, while depositing the sacrificial layer on the third wafer within the second deposition zone, and while depositing the buffer layer on a fourth wafer within the first deposition zone.

3 more elements

A method for forming a multi-layered material, comprising:

advancing a plurality of wafers through a deposition system, wherein the deposition system comprises a first deposition zone, a second deposition zone, a third deposition zone, and a fourth deposition zone;
depositing a first material layer on a first wafer within the first deposition zone;
depositing a second material layer on the first wafer within the second deposition zone, while depositing the first material layer on a second wafer within the first deposition zone;
depositing a third material layer on the first wafer within the third deposition zone, while depositing the second material layer on the second wafer within the second deposition zone, and while depositing the first material layer on a third wafer within the first deposition zone;
and
depositing a fourth material layer on the first wafer within the fourth deposition zone, while depositing the third material layer on the second wafer within the third deposition zone, while depositing the second material layer on the third wafer within the second deposition zone, and while depositing the first material layer on a fourth wafer within the first deposition zone;
heating each of the wafers to a predetermined temperature within a heat-up zone prior to advancing into the first deposition zone;
and
flowing at least one gas between each of the deposition zones to form gas curtains therebetween.

6 more elements

Dependencies are inferred from the claim text.

Continuous feed chemical vapor deposition

Life of this patent

Continuous feed chemical vapor deposition

Life of this patent

Abstract

Claims32