US 8,008,173 B2Granted

III nitride single crystal and method of manufacturing semiconductor device incorporating the III nitride single crystal

AssigneeSumitomo Electric Industries, Ltd.

InventorSeiji Nakahata

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Abstract

A III nitride single-crystal manufacturing method in which a liquid layer (3) of 200 μm or less thickness is formed in between a substrate (1) and a III nitride source-material baseplate (2), and III nitride single crystal (4) is grown onto the face (1s) on the liquid-layer side of the substrate (1). Herein, the substrate (1) in at least a superficial layer (1a) on the liquid-layer side may be formed of a III nitride single crystal, while the III nitride source-material baseplate (2) can be formed of a III nitride polycrystal. Further, the substrate (1) in at least a superficial layer (1a) on the liquid-layer side, and the III nitride source-material baseplate (2) can be formed of a III nitride single crystal, while the face (1s) on the liquid-layer side of the substrate (1) can be made a III-atom surface, and the face (2s) on the liquid-layer side of the III nitride source-material baseplate (2) can be made a nitrogen-atom surface.

Claims1

Dependent claims

A method of manufacturing a semiconductor device incorporating a III nitride single crystal, comprising:

obtaining a III nitride single crystal according to a method selected from any one of:
(a) a III nitride single-crystal manufacturing method wherein a liquid layer of 200 μm or less thickness is formed in between a substrate and a III nitride source-material baseplate, and III nitride single crystal is grown onto the face of said substrate on its liquid-layer side;
(b) a method according to (a), wherein said substrate in at least a superficial layer along the liquid layer is formed of a III nitride single crystal, and said III nitride source-material baseplate is formed of a III nitride polycrystal;
(c) a method according to (a), wherein said substrate in at least a superficial layer along the liquid layer, and said III nitride source-material baseplate are formed of a III nitride single crystal, and the face of said substrate on its liquid-layer side is a Group-III-atom surface, and the face of said III nitride source-material baseplate on its liquid-layer side is a nitrogen-atom surface;
(d) a method according to (a), wherein said liquid layer includes an element of at least one kind selected from the group consisting of elements constituting said III nitride single crystal;
or
(e) any combination of methods (a) to (d);
and
depositing one or more layers containing at least one selected from Ga, In and Al onto the obtained III nitride single-crystal.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application: 12/419,310Filed 7 Apr 2009 · division
Priority: JP 2004-21866327 Jul 2004
Published: US 2009/0197398 A16 Aug 2009
Granted: 30 Aug 2011
Term ends: Not estimatedThe source records don’t support an estimate.

Classification7 codes

C30B 19/04
Using molten solvents, e.g. flux: the solvent being a component of the crystal composition
C30B 7/00
Single-crystal growth from solutions using solvents which are liquid at normal temperature
C30B 7/005
Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions: epitaxial layer growth
C30B 9/06
By cooling of the solution: using as solvent a component of the crystal composition

Family

Application10/569,813Parent of this division · filed 16 Feb 2006
US 2009/0197398 A1Pre-grant publication · published 6 Aug 2009
US 7,534,295 B2Parent of this division
US 2008/0169532 A1Published application
US 8,008,173 B2This patent

From the US filing history. Foreign family members aren’t listed.